MOS管，广泛应用于电池充电器，普通电源，智能开关电源，灯具
功率开关，LED，车载，玩具，电动车，电脑主板.

产品型号:BSZ0904NSI
封装:QFN-8 3.3*3.3/PG-TSDSON-8

源漏极间雪崩电压V(br)dss(V):30

夹断电压VGS(V):±20

漏极电流Id(A):40

源漏极导通电阻rDS(on)(Ω):4 @VGS = 10 V

开启电压VGS(TH)(V):2.2

功率PD(W):37

极间电容Ciss(PF):1100

通道极性:N沟道

低频跨导gFS(s)：82

温度(℃):-55 ~150

描述:30V,40A N-Channel OptiMOS? Power-MOSFET

Features
Optimized SyncFET for high performance buck converters
100% avalanche tested
N-channel
Very low on-resistance RDS(on) @ VGS=4.5 V
Ultra low gate (Qg) and output charge (Qoss) for given RDS(on)
Qualified according to JEDEC1) for target applications
Superior thermal resistance
Pb-free plating;  RoHS compliant
Halogen-free according to IEC61249-2-21
Integrated monolitic Schottky-like diode

Applications
On board power for server
Power managment for high performance computing
Synchronous rectification
High power density point of load converters

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