产品型号:FCP20N60 600V N-Channel MOSFET

封装:TO-220

品牌：FAIRCHILD/仙童

源漏极间雪崩电压V(br)dss(V):600

夹断电压VGS(V):±30

漏极电流Id(A):20

源漏极导通电阻rDS(on)(Ω):0.19 @VGS = 10 V

开启电压VGS(TH)(V):5

功率PD(W):208

输入电容Ciss(PF):2370 typ.

通道极性:N沟道

低频跨导gFS(s)：17

单脉冲雪崩能量EAS(mJ):690

导通延迟时间Td(on)(ns):62 typ.

上升时间Tr(ns):140 typ.

关断延迟时间Td(off)(ns):230 typ.

下降时间Tf(ns):65 typ.

温度(℃): -55 ~150

描述:FCP20N60,TO-220,DIP/MOS,N场,600V,20A,0.19Ω N-沟道增强型场效应晶体管
   SuperFET is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
   This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

特点：
 * 650V @TJ = 150°C
 * Typ. RDS(on) = 0.15Ω
 * Ultra low gate charge/超低栅极电荷(typ. Qg = 75nC)
 * Low effective output capacitance/低有效输出电容 (typ. Coss.eff = 165pF)
 * 100% avalanche tested..... 100％雪崩测试
 * RoHS Compliant....RoHS标准

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