HEXFET® Power MOSFET
l Switch Mode Power Supply ( SMPS )
l Uninterruptable Power Supply
l High speed power switching
Benefits
Applications
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
l Effective Coss specified ( See AN1001)
VDSS Rds(on) max ID
500V 0.27W 20A
T*ical SMPS Topologies:
l Full Bridge
l PFC Boost
G D S
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 20
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current 80
PD @TC = 25°C Power Dissipation 280 W
Linear Derating Factor 2.2 W/°C
VGS Gate-to-Source Voltage &plu*n; 30 V
dv/dt Peak Diode Recovery dv/dt 3.8 V/ns
TJ Operating Junction and -55 to 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Mounting torqe, 6-32 or M3 screw 10 lbf•in (1.1N•m)
Absolute Maximum Ratings
Notes through are on page 8
PD- 91880