Alpha/阿尔法
AOD413
结型(JFET)
P沟道
增强型
1(V)
1(V)
1(pF)
1(dB)
1(mA)
1(mW)
类型:经销商
电话:
联系人:蔡林强
地址:广东深圳中国 广东 深圳市福田区 深圳市福田区中航路都会100电子城一楼1A104
∟ 结型场效应管(8)
AOU413
P-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = -40V
ID = -12A (VGS = -10V)
RDS(ON) < 45mΩ (VGS = -10V)
RDS(ON) < 69mΩ (VGS = -4.5V)
General Description
The AOU413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications. Standard Product
AOU413 is Pb-free (meets ROHS & Sony 259
specifications). AOU413L is a Green Product
ordering option. AOU413 and AOU413L are
electrically identical.
*51 223 MOS管
友情链接: 深圳市元东发电子有限公司