IR/国际整流器
IRFP26N60L
结型(JFET)
N沟道
耗尽型
MOS-HBM/半桥组件
CER-DIP/陶瓷直插
*肖特基势垒栅
22(V)
22(V)
22(μS)
22(pF)
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
IR*原装场效应管/散新场效应管 IRFP26N60L
IR*原装场效应管/散新场效应管 IRFP26N60L
IRFP26N60L产品规格 参数
Datasheets IRFP26N60LPBF
Product Photos TO-247-3
Catalog Drawings IRFP Series Side 1
IRFP Series Side 2
Standard Package 500
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 26A
Rds On (Max) @ Id, Vgs 250 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) @ Vgs 180nC @ 10V
Input Capacitance (Ciss) @ Vds 5020pF @ 25V
Power - Max 470W
Mounting T*e Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Packaging Tube
Catalog Page 1308 (US2011 Interactive)
1308 (US2011 PDF)
Other Names *IRFP26N60LPBF
友情链接: 深圳市元东发电子有限公司