0N/安森美
MJD122T4G MJD122 J122G
结型(JFET)
N沟道
增强型
MOS-TPBM/三相桥
CER-DIP/陶瓷直插
GE-P-FET锗P沟道
22(V)
22(V)
22(μS)
22(pF)
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
ON*原装*贴片场效应MJD122T4G MJD122 J122G
ON*原装*贴片场效应MJD122T4G MJD122 J122G
MJD122T4G MJD122 J122G产品规格 参数 PDF
Datasheets MJD122,127
Product Photos TO-252-3
Catalog Drawings Transistor DPAK
Standard Package 2,500
Category Discrete Semiconductor Products
Family Transistors (BJT) - Single
Series -
Transistor T*e NPN - Darlington
Current - Collector (Ic) (Max) 8A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 4V @ 80mA, 8A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 4A, 4V
Power - Max 1.75W
Frequency - Transition 4MHz
Mounting T*e Surface Mount
Package / Case TO-252-3, DPak (2 Leads Tab), SC-63
Supplier Device Package DPAK-3
Packaging Tape & Reel (TR)
Catalog Page 1340 (US2011 Interactive)
1340 (US2011 PDF)
Other Names MJD122T4GOS
MJD122T4GOS-ND
MJD122T4GOSTR
友情链接: 深圳市元东发电子有限公司