CER-DIP/陶瓷直插
2SK3562 K3562
*肖特基势垒栅
MOS-FBM/全桥组件
TOSHIBA/东芝
P沟道
结型(JFET)
耗尽型
类型:经销商
电话:
联系人:陈义伟
地址:广东深圳中国 广东 深圳市福田区 华强三店3A132(佳和大厦)
∟ 结型场效应管(267)
TOSHIBA东芝*原装MOS场效应管 2SK3562 K3562
TOSHIBA东芝*原装MOS场效应管 2SK3562 K3562
2SK3562 K3562产品规格 参数
Datasheets 2SK3562
Mosfets Prod Guide
Product Photos 2SK3562(Q)
Catalog Drawings TO-220SIS Side 3
TO-220SIS Side 2
TO-220SIS Side 1
Standard Package 50
Category Discrete Semiconductor Products
Family FETs - Single
Series -
FET T*e MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25° C 6A
Rds On (Max) @ Id, Vgs 1.25 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 28nC @ 10V
Input Capacitance (Ciss) @ Vds 1050pF @ 25V
Power - Max 40W
Mounting T*e Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220SIS
Packaging Tube
Catalog Page 1439 (US2011 Interactive)
1439 (US2011 PDF)
Other Names 2SK3562Q
友情链接: 深圳市元东发电子有限公司