General Description Product Summary

VDS

ID (at VGS=10V) 23A

RDS(ON) (at VGS=10V) < 3.7mΩ

RDS(ON) (at VGS = 4.5V) < 5.3mΩ

Application 100% UIS Tested

100% Rg

Tested

• Latest Trench Power AlphaMOS (αMOS LV) technology 30V

• Very Low RDS(on) at 4.5VGS

• Low Gate Charge

• High Current Capability

• RoHS and Halogen-Free Compliant

• DC/DC Converters in Computing, Servers, and POL

• Isolated DC/DC Converters in Telecom and Industrial

Drain-Source Voltage

Absolute Maximum Ratings TA=25°C unless otherwise noted

30 V

PD

°C

TA=25°C

TA=100°C

Power Dissipation B

Parameter Maximum Units

ID

W

1.2

68

174

Gate-Source Voltage ±20 V

Continuous Drain

Current

Thermal Characteristics

Pulsed Drain Current C

A

-55 to 150

mJ

37

Avalanche energy L=0.1mH C

23

14

Junction and Storage Temperature Range

Parameter Typ U

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