AO3413 / A03413

P-Channel Enhancement Mode Field Effect Transistor

General Description
The AO3413 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.

Features
VDS (V) = -20V
ID = -3 A
RDS(ON) < 97mΩ (VGS = -4.5V)
RDS(ON) < 130mΩ (VGS = -2.5V)
RDS(ON) < 190mΩ (VGS = -1.8V)

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter	Symbol	Maximum	Units
Drain-Source Voltage	VDS	-20	V
Gate-Source Voltage	VGS	±8	V
Continuous Drain Current         TA=25°C                                                TA=70°C	ID	-3 -2.4	A
Pulsed Drain Current	IDM	-15	A
Power Dissipation                     TA=25°C                                                 TA=70°C	PD	1.4 0.9	W
Junction and Storage Temperature Range	TJ, TSTG	-55 to 150	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Units
Maximum Junction-to-Ambient         t ≤ 10s	RθJA	70	90	°C/W
Maximum Junction-to-Ambient        Steady-State	RθJA	100	125	°C/W
Maximum Junction-to-Lead             Steady-State	RθJL	63	80	°C/W

企业名：荣盛电子(香港)有限公司

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