原装,只有原装，只做原装！ 500V/10A

Power MOSFET
IRF840, SiHF840
Vishay Siliconix
FEATUR*
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
D*CRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the * combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 14 mH, RG = 25 Ω, IAS = 8.0 A (see fig. 12).
c. ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODU* SUMMARY
VDS (V) 500
RDS(on) (Ω) VGS = 10 V 0.85
Qg (Max.) (nC) 63
Qgs (nC) 9.3
Qgd (nC) 32
Configuration Single
N-Channel MOSFET
G
D
S
TO-220
G
D
S
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package TO-220
Lead (Pb)-free
IRF840PbF
SiHF840-E3
SnPb
IRF840
SiHF840
ABSOLUTE

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