是
ISC
2S*466
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Complement to T*e 2SA1693
APPLICATIONS
·Designed for audio and general purpose applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 80 | V |
VEBO | Emitter-Base Voltage | 6 | V |
IC | Collector Current-Continuous | 6 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 60 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 80 |
| V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.2A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 120V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 6V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 2A ; VCE= 4V | 50 |
| 180 |
|
COB | Output Capacitance | IE= 0 ; VCB= 10V;f= 1.0MHz |
| 110 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= -0.5A ; VCE= 12V |
| 20 |
| MHz |
Switching Times | ||||||
ton | Turn-on Time | IC= 3A ,RL= 10Ω, IB1= -IB2= 0.3A,VCC=30V |
| 0.16 |
| μs |
tstg | Storage Time |
| 2.6 |
| μs | |
tf | Fall Time |
| 0.34 |
| μs | |
u hFECl*ifications
O | P | Y |
50-100 | 70-140 | 90-180 |
"
友情链接： 深圳市元东发电子有限公司
