无锡固电ISC 供应21373三管

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D*CRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= -160V(Min)

·Wide Area of Safe Operation

·Complement to T*e 2SD2066

APPLICATIONS

·Designed for high power amplifications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-160	V
V_CEO	Collector-Emitter Voltage	-160	V
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current-Continuous	-12	A
I_CP	Collector Current-Pulse	-20	A
P_C	Collector Power Dissipation @ T_C=25℃	120	W
P_C	Collector Power Dissipation @ T_a=25℃	2.5	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -8A; I_B= -0.8A			-2.0	V
V_BE_(on)	Base-Emitter On Voltage	I_C= -8A; V_CE= -5V			-1.8	V
I_CBO	Collector Cutoff Current	V_CB= -160V; I_E= 0			-50	μA
I_EBO	Emitter Cutoff Current	V_EB= -3V; I_C= 0			-50	μA
h_FE-1	DC Current Gain	I_C= -20mA; V_CE= -5V	20
h_FE-2	DC Current Gain	I_C= -1A; V_CE= -5V	60		200
h_FE-3	DC Current Gain	I_C= -8A; V_CE= -5V	20
f_T	Current-Gain—Bandwidth Product	I_C= -0.5A; V_CE= -5 V; f= 1MHz		15		MHz
C_OB	Output Capacitance	I_E= 0; V_CB= -10V; f= 1MHz		400		pF