无锡固电ISC供应2SD1212三*管

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D*CRIPTION

·High Collector Current:: I_C= 12A

·Low Collector Saturation Voltage

: V_CE(sat)= 0.4V(Max)@I_C= 5A

·Complement to T*e 2*903

APPLICATIONS

·Designed for relay drivers, high-speed inverters, converters,

and other general large-current switching applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	60	V
V_CEO	Collector-Emitter Voltage	30	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	12	A
I_CM	Collector Current-Peak	20	A
P_C	Total Power Dissipation @ T_C=25℃	35	W
P_C	Total Power Dissipation @ T_a=25℃	1.75	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= 1mA ; R_BE=∞	30			V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= 1mA ; I_E= 0	60			V
V_(BR)EBO	Emitter-BaseBreakdownVoltage	I_E= 1mA ; I_C= 0	6			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 0.25A			0.4	V
I_CBO	Collector Cutoff Current	V_CB= 40V; I_E= 0			0.1	mA
I_EBO	Emitter Cutoff Current	V_EB= 4V; I_C= 0			0.1	mA
h_FE-1	DC Current Gain	I_C= 1A; V_CE= 2V	70		280
h_FE-2	DC Current Gain	I_C= 6A; V_CE= 2V	30
f_T	Current-Gain—Bandwidth Product	I_C= 1A; V_CE= 5V		120		MHz
Switching times
t_on	Turn-on Time	R_L= 2Ω, V_CC=10V I_C= 5A; I_B1= -I_B2= 0.5A		0.2		μs
t_stg	Storage Time			0.5		μs
t_f	Fall Time			0.03		μs