是
ISC
2SA1050
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·High Current Capability
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min.)
·Complement to T*e 2SC2460
APPLICATIONS
·Designed for power amplifer and general purpose
applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -140 | V |
VCEO | Collector-Emitter Voltage | -140 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -12 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
Tj=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -140 |
|
| V |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= -1mA; IE= 0 | -140 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= -1mA; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5A; IB= -0.5A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -140V; IE= 0 |
|
| -10 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -10 | μA |
hFE | DC Current Gain | IC= -1A ; VCE= -5V | 55 |
| 240 |
|
fT | Current-Gain—Bandwidth Product | IC= -1A ; VCE= -10V |
| 70 |
| MHz |
u hFECl*ifications
R | O | Y |
55-110 | 80-160 | 120-240 |
友情链接： 深圳市元东发电子有限公司
