是
ISC
2SD1290
功率
硅(Si)
NPN型
平面型
TO-*N
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
·High Voltage
·Wide Area of Safe Operation
·Built-in damper diode
APPLICATIONS
·Designed for color TV horizontal deflectionoutput
applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 1500 | V |
VC* | Collector-Emitter Voltage | 1500 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 3 | A |
ICM | Collector Current-Peak | 10 | A |
PC | Collector Power Dissipation @TC=25℃ | 50 | W |
Tj | Junction Temperature | 130 | ℃ |
Tstg | StorageTemperature Range | -55-130 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 500mA; IC= 0 | 5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 2A; IB= 0.75A |
|
| 5.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 2A; IB= 0.75A |
|
| 1.5 | V |
hFE | DC Current Gain | IC= 2A; VCE= 10V | 3 |
| 8 |
|
ICBO | Collector Cutoff Current | VCB= 750V; IE= 0 VCB= 1500V; IE= 0 |
|
| 50 1.0 | μA mA |
VECF | C-E Diode Forward Voltage | IF= 4A |
|
| 2.2 | V |
Switching Times | ||||||
ts | Storage Time | IC= 2A;ILeak= 0.75A; LB= 5μH |
|
| 7 | μs |
tf | Fall Time |
|
| 1 | μs | |
"
友情链接： 深圳市元东发电子有限公司
