是
isc
2SA969
放大
硅(Si)
PNP型
平面型
直插型
金属封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -160V(Min)
·Good Linearity of hFE
·Complement to T*e 2SC2239
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -160 | V |
VCEO | Collector-Emitter Voltage | -160 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -1.5 | A |
IE | Emitter Current- Continuous | 1.5 | A |
PC | Total Power Dissipation @ TC=25℃ | 25 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -10mA ; IB= 0 | -160 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= -1mA ; IC= 0 | -5 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -0.5A; IB= -50mA |
|
| -1.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -0.5A ; VCE= -5V |
|
| -1.0 | V |
ICBO | Collector Cutoff Current | VCB= -160V ; IE= 0 |
|
| -1.0 | μA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -1.0 | μA |
hFE | DC Current Gain | IC= -0.1A ; VCE= -5V | 70 |
| 240 |
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1MHz |
| 30 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -0.1A;VCE= -10V |
| 100 |
| MHz |
u hFECl*ifications
O | Y |
70-140 | 120-240 |
"
友情链接: 深圳市元东发电子有限公司