无锡固电ISC供应2SD1556三*管

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D*CRIPTION

·High Breakdown Voltage-

: V_CBO= 1500V (Min)

·High Switching Speed

·Low Saturation Voltage

·Built-in Damper Diode

APPLICATIONS

·Designed for color TV horizontal output applications

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	1500	V
V_CEO	Collector-Emitter Voltage	600	V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current- Continuous	6	A
I_B	Base Current- Continuous	3	A
P_C	Collector Power Dissipation @ T_C=25℃	50	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)EBO	Emitter-Base Breakdown Voltage	I_E= 200mA ; I_C= 0	5			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 5A; I_B= 1A			5.0	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= 5A; I_B= 1A			1.5	V
I_CBO	Collector Cutoff Current	V_CB= 500V; I_E= 0			10	μA
h_FE	DC Current Gain	I_C= 1A ; V_CE= 5V	8
V_ECF	C-E Diode Forward Voltage	I_F= 6A			2.0	V
f_T	Current-Gain—Bandwidth Product	I_C= 0.1A ; V_CE= 10V		3		MHz
C_OB	Output Capacitance	I_E= 0 ; V_CB= 10V;f_test= 1.0MHz		165		pF
t_f	Fall Time	I_CP= 5A , I_B1(_end₎= 1A		0.5	1.0	μs