是
ISC/ISCSEMI
BU941P
复合
硅(Si)
NPN型
15（A）
155（W）
平面型
TO-*N
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 500 | V |
VCEO | Collector-Emitter Voltage | 400 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current- Continuous | 15 | A |
ICM | Collector Current-Peak | 30 | A |
IB | Base Current | 1 | A |
IBM | Base Current-Peak | 5 | A |
PC | Collector Power Dissipation @TC=25℃ | 155 | W |
Tj | Junction Temperature | 175 | ℃ |
Tstg | StorageTemperature Range | -65~175 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.1A; IB= 0;L= 10mH | 400 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 8 A; IB= 100mA |
|
| 1.6 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= 10 A; IB= 250mA |
|
| 1.8 | V |
VCE(sat)-3 | Collector-Emitter Saturation Voltage | IC= 12 A; IB= 300mA |
|
| 2.0 | V |
VBE(sat)-1 | Base-Emitter Saturation Voltage | IC= 8 A; IB= 100mA |
|
| 2.2 | V |
VBE(sat)-2 | Base-Emitter Saturation Voltage | IC= 10 A; IB= 250mA |
|
| 2.5 | V |
VBE(sat)-3 | Base-Emitter Saturation Voltage | IC= 12 A; IB= 300mA |
|
| 2.7 | V |
IC* | Collector Cutoff Current | VCE= 500V;VBE= 0 VCE= 500V;VBE= 0;Tj= 125℃ |
|
| 0.1 0.5 | mA |
ICEO | Collector Cutoff Current | VCE= 450V; IB= 0 VCE= 450V; IB= 0;Tj= 125℃ |
|
| 0.1 0.5 | mA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 20 | mA |
hFE | DC Current Gain | IC= 5A ; VCE= 10V | 300 |
|
|
|
VECF | C-E Diode Forward Voltage | IF= 10A |
|
| 2.5 | V |
友情链接： 深圳市元东发电子有限公司
