无锡固电ISC供应三*管2SD1046

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D*CRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 120V(Min)

·Good Linearity of h_FE

·High Current Capability

·Wide Area of Safe Operation

·Complement to T*e 2*816

APPLICATIONS

·For LF power amplifier, 50W output large power switching

applications.

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	150	V
V_CEO	Collector-Emitter Voltage	120	V
V_EBO	Emitter-Base Voltage	6	V
I_C	Collector Current-Continuous	8	A
I_CP	Collector Current-Pulse	12	A
P_C	Collector Power Dissipation @ T_C=25℃	80	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-40~150	℃

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_(BR)CEO	Collector-Emitter Breakdown Voltage	I_C= 50mA ; R_BE=∞	120			V
V_(BR)CBO	Collector-BaseBreakdownVoltage	I_C= 5mA; I_E= 0	150			V
V_(BR)EBO	Emitter-BaseBreakdownVoltage	I_E= 5mA; I_C= 0	6			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= 5.0A; I_B= 0.5A			2.0	V
V_BE_(on)	Base-Emitter On Voltage	I_C= 1A ; V_CE= 5V			1.5	V
I_CBO	Collector Cutoff Current	V_CB= 80V; I_E= 0			100	μA
I_EBO	Emitter Cutoff Current	V_EB= 4V; I_C= 0			100	μA
h_FE-1	DC Current Gain	I_C= 1A; V_CE= 5V	60		200
h_FE-2	DC Current Gain	I_C= 5A; V_CE= 5V	20
C_OB	Output Capacitance	I_E= 0;V_CB= 10V;f_test= 1.0MHz		160		pF
f_T	Current-Gain—Bandwidth Product	I_C= 1A ; V_CE= 5V		15		MHz
Switching times
t_on	Turn-on Time	I_C= 1A ,R_L= 20Ω, I_B1= -I_B2= 0.1A,V_CC=20V		0.22		μs
t_stg	Storage Time			6.66		μs
t_f	Fall Time			1.02		μs