无锡固电ISC 供应2SA1879三极管

发布询价信息

相关产品

金牌会员第 9 年

产品分类

新品上架

商品信息 更新时间：2013-01-13

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

:V_CEO(SUS)= -80(V)(Min.)

·Low Collector Saturation Voltage

:V_CE(_sat₎= -0.3(V)(Max.)@I_C= -3.5A

·Large Current Capability-I_C= -7A

APPLICATIONS

·Designed for use as a driver in DC/DC converters and

actuators.

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	-80	V
V_CEO	Collector-Emitter Voltage	-80	V
V_EBO	Emitter-Base Voltage	-7	V
I_C	Collector Current-Continuous	-7	A
I_CM	Collector Current-Peak	-14	A
I_B	Base Current-Continuous	-1.5	A
I_BM	Base Current-Peak	-2	A
P_C	Total Power Dissipation @ T_C=25℃	25	W
T_J	JunctionTemperature	150	℃
T_stg	StorageTemperature Range	-55~150	℃

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	5	℃/W

ELECTRICAL CHARACTERISTICS

T_C=25℃unless otherwise specified

SYMBOL	PARAMETER	CONDITIONS	MIN	TYP.	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C= -0.1A; I_B= 0	-80			V
V_CE_(sat)	Collector-Emitter Saturation Voltage	I_C= -3.5A; I_B= -0.35A			-0.3	V
V_BE_(sat)	Base-Emitter Saturation Voltage	I_C= -3.5A; I_B= -0.35A			-1.2	V
I_CBO	Collector Cutoff Current	V_CB= -80V; I_E= 0			-100	μA
I_CEO	Collector Cutoff Current	V_CE= -80V; I_B= 0			-100	μA
I_EBO	Emitter Cutoff Current	V_EB= -7V; I_C= 0			-100	μA
h_FE	DC Current Gain	I_C= -3.5A; V_CE= -2V	70
f_T	Current-Gain—Bandwidth Product	I_C= -0.7A; V_CE= -10V		50		MHz
Switching Times
t_on	Turn-on Time	I_C= -3.5A, I_B1= -I_B2= -0.35A, R_L= 8Ω, V_BB2=-4V;			0.3	μs
t_stg	Storage Time				1.5	μs
t_f	Fall Time				0.2	μs