| 品牌/商标 | IR美国国际整流器 | 型号/规格 | IRLML2502TR |
| 应用范围 | 功率 | *性 | NPN型 |
| 集电**大耗散功率PCM | 1.25（W） | 结构 | 点接触型 |
| 封装形式 | 贴片型 | 封装材料 | 塑料封装 |
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET? power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3?, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the * available.
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友情链接： 深圳市元东发电子有限公司
