2SK4107
2
TOSHIBA Field Effect Transistor  Silicon N-Channel MOS T*e (π -MOS VI)
2SK4107

○ Switching Regulator Applications


• Low drain−source ON resistance : R
DS

(ON)
= 0. 33 Ω (t*.)
• High forward transfer admittance : |Y
fs
| = 8.5 S (t*.)
• Low leakage current : I
DSS
= 100 μA (max) (V
DS
= 500 V)
• Enhancement mode : V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)

Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain−source voltage V
DSS
500 V
Drain−gate voltage (R
GS
= 20 k?) V
DGR
500 V
Gate−source voltage V
GSS
&plu*n;30 V
DC (Note 1) I
D
15 A
Drain current
Pulse (Note 1) I
DP
60 A
Drain power dissipation (Tc = 25°C) P
D
150 W
Single-pulse avalanche energy
(Note 2)
E
AS
765 mJ
Avalanche current I
AR
15 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch−c)
0.833 °C/W
Thermal resistance, channel to 
ambient
R
th (ch−a)
50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 5.78 mH, R
G
= 25 ?, I
AR
= 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care. 

Unit: mm

1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE

JEDEC ―
JEITA ―
TOSHIBA 2-16C1B
Weight: 4.6 g (t*.)