2SK3878
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
2SK3878
Switching Regulator Applications
• Low drain-source ON resistance: R
DS (ON)
= 1.0 Ω (typ.)
• High forward transfer admittance: ?Y
fs
? = 7.0 S (typ.)
• Low leakage current: I
DSS
= 100 μA (max) (V
DS
= 720 V)
• Enhancement model: V
th
= 2.0~4.0 V (V
DS
= 10 V, I
D
= 1 mA)


Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Drain-source voltage V
DSS
900 V
Drain-gate voltage (R
GS
= 20 kΩ) V
DGR
900 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
9
Drain current
Pulse (Note 1) I
DP
27
A
Drain power dissipation (Tc = 25°C) P
D
150 W
Single pulse avalanche energy
(Note 2)
E
AS
778 mJ
Avalanche current I
AR
9 A
Repetitive avalanche energy (Note 3) E
AR
15 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
−55~150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristic Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
0.833 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
50 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: V
DD
= 90 V, T
ch
= 25°C, L = 17.6 mH, R
G
= 25 Ω, I
AR
= 9 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device. Handle with care.