FDT457N
 N-Channel Enhancement Mode Field Effect Transistor                                                                
                                                                                       
General  Description                                                                   Features
5 A, 30 V. RDS(ON)
 = 0.06 Ω @ VGS = 10 V                             
                 RDS(ON)
 = 0.090 Ω @ VGS = 4.5 V. 
High density cell design for extremely low RDS(ON)
.
High power and current handling capability in a widely used
surface mount package.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance,
provide *ior switching performance. These products are
well suited to low voltage, low current applications such as
notebook computer power management, battery powered
circuits, and DC motor control.

企业名：结型场效应管 邹荣财

类型：经销商

电话：

联系人：邹荣财

地址：广东深圳中国 广东 深圳市龙岗区 布吉国展苑16A