2n6796
mot
TO-205AF
普通型
直插式
散装
供应2N6796 8A,100V Single N-Ch Hi-Rel MOS管 8A, 100V, 0.180 Ohm, N-Channel PowerMOSFETThe 2N6796 is an N-Channel enhancement mode silicongate power field effect transistor designed for applicationssuch as switching regulators, switching converters, motordrivers, relay drivers, and drivers for high power bipolarswitching transistors requiring high speed and low gate drivepower. This type can be operated directly from integrated circuits. Features• 8A, 100V• rDS(ON)= 0.180Ω• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Majority Carrier Device• Related Literature- TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”
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