QFET TM FQB5N60C / FQI5N60C 600V N-Channel MOSFET 
General Description 
These N-Channel enhancement mode power field effecttransistors are produced using Fairchild’s proprietary,planar stripe,  DMOS technology. This advanced technology has been especially tailored tominimize on-state resistance, provide superior switchingperformance, and withstand high energy pulse in theavalanche and commutation mode. These devices are wellsuited for high efficiency switched mode power supplies,active power factor correction, electronic lamp ballastsbased on half bridge topology.
 Features 
•4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
•Low gate charge ( typical  15 nC)
•Low Crss ( typical  6.5 pF)
•Fast switching 
•100% avalanche tested
• Improved dv/dt capabilit

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