200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package

优势:

·RoHS Compliant

·Low RDS(on)

·Industry-leading quality

·Dynamic dv/dt Rating

·Fast Switching

·Fully Avalanche Rated

·175°C Operating Temperature

Description 

Fifth Generation HEXFETs from International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that

HEXFET Power MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar

but superior to the earlier TO-218 package because of its isolated mounting hole.

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