NPN型
贴片型
2SC1623 L6
点接触型
长电
硅(Si)
塑料封装
放大
企业名:东莞市福日电子有限公司
类型:生产加工
电话: 0769-85388861
联系人:陈聚仁
地址:广东东莞长安镇上沙S358省道旁明和电子广场B区312号
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SOT-23 Plastic-Encapsulate Transistors
2SC1623 TRANSISTOR (NPN)
FEATUR*
z High DC current gain :hFE=200(T*)VCE=6V, IC=1mA
z High voltage:VCEO=50V
MAXIMUM RATINGS (TA=25℃unless otherwise noted)
SOT-23
1.BASE
2.EMITTER
3.COLLE*OR
Symbol | Parameter | Value | Units |
VCBO | Collector-Base Voltage | 60 | V |
VCEO | Collector-Emitter Voltage | 50 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current -Continuous | 100 | mA |
PC | Collector Power Dissipation | 200 | mW |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -55-150 | ℃ |
ELE*RICAL CHARA*ERISTICS (Tamb=25℃unless otherwise specified)
Parameter |
Symbol |
Test conditions |
MIN |
TYP |
MAX |
UNIT |
Collector-base breakdown voltage |
V(BR)CBO |
IC=100μA,IE=0 |
60 |
|
|
V |
Collector-emitter breakdown voltage |
V(BR)CEO |
IC=1mA,IB=0 |
50 |
|
|
V |
Emitter-base breakdown voltage |
V(BR)EBO |
IE=100μA,IC=0 |
5 |
|
|
V |
Collector cut-off current |
ICBO |
VCB=60V,IE=0 |
|
|
0.1 |
μA |
Emitter cut-off current |
IEBO |
VEB=5V,IC=0 |
|
|
0.1 |
μA |
DC current gain |
hFE |
VCE=6V,IC=1mA |
90 |
200 |
600 |
|
Collector-emitter saturation voltage |
VCE(sat) |
IC=100mA,IB=10mA |
|
|
0.3 |
V |
Base-emitter saturation voltage |
VBE(sat) |
IC=100mA,IB=10mA |
|
|
1 |
V |
Transition frequency |
fT |
VCE=6V,IC=10mA |
|
250 |
|
MHz |
CLASSIFICATION OF hFE
Rank |
L4 |
L5 |
L6 |
L7 |
Range |
90-180 |
135-270 |
200-400 |
300-600 |
Marking |
L4 |
L5 |
L6 |
L7 |
Typical Characteristics 2SC1623
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