现货*供应IRF540N，IRF540NPBF 场效应管大功率场效应管 IRF

漏*电流：
1
材料：
N-FET硅N沟道
种类：
*缘栅(MOSFET)
型号/规格：
IRF540N
封装外形：
P-DIT/塑料双列直插
品牌/商标：
IR/国际整流器
用途：
SW-REG/开关电源
沟道类型：
N沟道
导电方式：
增强型
低频噪声系数：
1
*间电容：
47

发布询价信息

普通会员

企业名：深圳市科沃科技有限公司

类型：生产加工

电话： 755-26441258

联系人：何岚

地址：广东深圳南山区深南大道12069号海岸时代大厦西座1202室

产品分类

场效应管MOSFET(63)
∟ MOSFET(46)∟ 其他场效应管模块(1)

新品上架

商品信息

MOSFET, 100V, 33A, 44 mOhm, 47.3 nC Qg, TO-220AB

Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated