DESCRIPTION
The AO3422A is the N-Channel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high-density process is especially tailored to minimize on-state resistance. These
devices are particularly suited for low voltage application such as cellular phone and
notebook computer power management and other battery powered circuits where high
side switching.
PIN CONFIGURATION
SOT-23-3L

DC current capability
extremely low RDS(ON)
Exceptional on-resistance and maximum
Super high density cell design for
60V/6.0A, RDS(ON)= 28m? (Typ.)
@VGS= 10V
60V/2.5A, RDS(ON)= 38m?
@VGS= 4.5V
60V/1.5A, RDS(ON)= 100m?
@VGS= 2.5V
1.Gate 2.Source 3.Drain
SOT-23-3L package design

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