Fet/东沅 FKBA6032 PRPAK5x6 N沟道60V快速开关MOSFET

FKBA6032 Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

● Drain- Source Breakdown Voltage: 60V
● Static Drain-Source On-Resistance
VGS=10V , ID=10A --- 7.1~8.5mΩ
VGS=4.5V , ID=5A --- 9.5~12mΩ
● Gate Threshold Voltage: 1.2~2.5V
● Drain-Source Leakage Current
VDS=48V , VGS=0V , TJ=25℃: 1uA
VDS=48V , VGS=0V , TJ=55℃: 5uA
● Gate- Source Leakage Current: ±100nA
● Gate Resistance: 1.2Ω
● Total Gate Charge: 57nC
● Gate Source Charge: 8.7nC
● Gate-Drain Charge: 14nC
● Turn-On Delay Time: 16.2ns
● Rise Time: 41.2ns
● Turn-Off Delay Time: 56.4ns
● Fall Time: 16.2ns
● Input Capacitance: 3307pF
● Output Capacitance: 201pF
● Reverse Transfer Capacitance: 105pF

FKBA6032 Diode Characteristics
● Continuous Source Current: 75A
● Pulsed Source Current: 
● Diode Forward Voltage: 1.2V
● Reverse Recovery Time: 22nS
● Reverse Recovery Charge: 72nC

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