BS107ARL1G

封装 / 箱体:TO-92-3

通道数量:1 Channel

晶体管极性:N-ChannelVds-

漏源极击穿电压:200 VId-

连续漏极电流:250 mARds On-

漏源导通电阻:6.4 OhmsVgs - 

栅极-源极电压:20 V

最小工作温度:- 55 C

最大工作温度:+ 150 C

Pd-功率耗散:350 mW

配置:Single通道模式:Enhancement

封装:Cut Tape封装:Reel

高度:5.33 mm 长度:5.2 mm 

产品:MOSFET Small Signal 

系列:BS107A 

晶体管类型:1 N-Channel 

类型:MOSFET 宽度:4.19 mm 

商标:ON Semiconductor

 正向跨导 - 最小值:0.0004 S 

产品类型:MOSFET 

工厂包装数量:2000 

子类别:MOSFETs 

单位重量:453.600 mg

BS107ARL1GBS107ARL1GBS107ARL1GBS107ARL1GBS107ARL1GBS107AR

Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS − − 30 nAdc

Drain−Source Breakdown Voltage (VGS = 0, ID = 100 Adc) V(BR)DSX 200 − − Vdc

Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS − 0.01 10 nAdc

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 − 3.0 Vdc

Static Drain−Source On Resistance

BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)

(VGS = 10 Vdc, ID = 200 mAdc)

BS107A (VGS = 10 Vdc)

(ID = 100 mAdc)

(ID = 250 mAdc)

rDS(on)

−

−

−

−

−

−

4.5

4.8

28

14

6.0

6.4

SMALL−SIGNAL CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss − 60 − pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss − 6.0 − pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss − 30 − pF

Forward Transconductance

(VDS = 25 Vdc, ID = 250 mAdc)

gfs 200 400 − mmhos

SWITCHING CHARACTERISTICS

Turn−On Time ton − 6.0 15 ns

Turn−Off Time toff − 12 15 ns

3. Pulse Test: Pulse Width  300 s, Duty Cycle  2.0%.

Fig

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