UD4614L-SO8-R

DESCRIPTION
The UTC UD4614 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The
UTC UD4614 may be used in H-bridge, inverters and other applications.

􀂄FEATURES
* N-Channel: 40V/6A

RDS(ON) = 23.2mΩ (typ.) @ VGS =10V

RDS(ON) = 32.6mΩ (typ.) @ VGS= 4.5V

* P-Channel: -40V/-5A

RDS(ON) = 34.7mΩ (typ.) @ VGS= -10V

RDS(ON) = 50.6mΩ (typ.) @ VGS= -4.5V

* Super high dense cell design
* Reliable and Rugged

ORDERING INFORMATION

Ordering Number Lead Free                     Halogen Free	Package	Packing
UD4614L-S08-R            UD4614G-S08-R	SOP-8	Tape Reel

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C, unless otherwise specified)
N-Channel:

PARAMETER	SYMBOL	RATINGS	UNIT
Drain-Source Voltage	VDS	40	V
Gate-Source Voltage	VGS	±20	V
Continuous Drain Current (Note3)         TC=25°C	ID	6	A
Pulsed Drain Current (Note3)                TC=25°C	IDM	20	A
Power Dissipation                                  TC=25°C                                                               TC=100°C	PD	2 1.28	W
Junction Temperature	TJ	+150	°C
Storage Temperature	TSTG	-55 ~ +150	°C

   
P-Channel:

PARAMETER	SYMBOL	RATINGS	UNIT
Drain-Source Voltage	VDS	-40	V
Gate-Source Voltage	VGS	±20	V
Continuous Drain Current (Note3)       TC=25°C	ID	-5	A
Pulsed Drain Current (Note3)              TC=25°C	IDM	-20	A
Power Dissipation                               TC=25°C                                                          TC=100°C	PD	2 1.28	W
Junction Temperature	TJ	+150	°C
Storage Temperature	TSTG	-55 ~ +150	°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.

   

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