ALE美国
TY8205
*缘栅(MOSFET)
N沟道
耗尽型
DC/直流
SMD(SO)/表面封装
N-FET硅N沟道
企业名:杭州明恩电子有限公司
类型:
电话: 86 571 85459810
手机:13735431139
联系人:刘淑芳
地址:浙江杭州中国 浙江 杭州市 中河
∟ MOSFET(1)
20V, 6A, RDS(on) (Max 25 mΩ) @ VGS=4.5V
RDS(on) (Max 37 mΩ) @ VGS=2.5V
■ Performance and Cost Competitive
■ Advanced Trench Technology
■ Low RDS(on) Minimizes Conduction Loss
■ Low Capacitance Minimizes Driver Loss
■ Optimized Gate Charge Minimizes Switching Loss
General Description
This low voltage Power MOSFET is produced using
TIDC’s advanced high density trench DMOS
technology. This latest technology has been especially
designed to minimize on-state resistance and parasitic
capacitance, have a high rugged avalanche
characteristics. These devices are well suited for high
efficiency switching applications、DC/DC conversion、
CPU power delivery and Synchronous rectification
友情链接: 深圳市元东发电子有限公司