20V, 6A, RDS(on) (Max 25 mΩ) @ VGS=4.5V
RDS(on) (Max 37 mΩ) @ VGS=2.5V
■ Performance and Cost Competitive
■ Advanced Trench Technology
■ Low RDS(on) Minimizes Conduction Loss
■ Low Capacitance Minimizes Driver Loss
■ Optimized Gate Charge Minimizes Switching Loss

General Description
This low voltage Power MOSFET is produced using
TIDC’s advanced high density trench DMOS
technology. This latest technology has been especially
designed to minimize on-state resistance and parasitic
capacitance, have a high rugged avalanche
characteristics. These devices are well suited for high
efficiency switching applications、DC/DC conversion、
CPU power delivery and Synchronous rectification

企业名：杭州明恩电子有限公司

类型：

电话： 86 571 85459810

手机：13735431139

联系人：刘淑芳

地址：浙江杭州中国 浙江 杭州市 中河