AOS/美国万代
AOD464
*缘栅(MOSFET)
N沟道
耗尽型
MOS-FBM/全桥组件
SMD(SO)/表面封装
N-FET硅N沟道
属性值
企业名:深圳市明彩电子有限公司
类型:经销商
电话:
联系人:陈才明
地址:广东深圳中国 广东 深圳市福田区 深南路佳和华强大厦A座20楼2006E
∟ 整流二极管(64)∟ 稳压二极管(2)∟ 桥堆/整流桥/桥式整流器(7)∟ 变容二极管(1)∟ 瞬态(变)抑制二极管(86)∟ 肖特基二极管(18)
AOD464
N-Channel Enhancement Mode Field Effect Transistor.
General Description
The AOD464 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in high voltage
synchronous rectification , load switching and general
purpose applications. Standard Product AOD464 is Pbfree
(meets ROHS & Sony 259 specifications).
AOD464L is a Green Product ordering option. AOD464
and AOD464L are electrically identical.
Features
VDS (V) = 105V
ID = 40 A (VGS =10V)
RDS(ON) < 28 mΩ (VGS =10V) @ 20A
RDS(ON) < 31 mΩ (VGS = 6V)
友情链接: 深圳市元东发电子有限公司