ME
MEM2302XG
*缘栅(MOSFET)
N沟道
增强型
类型:经销商
电话:
联系人:凡静
地址:广东深圳中国 广东 深圳市福田区 福田区福华路34号公汽大厦719-720
General Description
MEM2302XG Series N-channel enhancement mode field-effect transistor ,produced with high cell densityDMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications, and low power dissipation in a very *all outline surface mount package.
Features
20V/3A
RDS(ON) =29mΩ@ VGS=4.5V, ID=3A
RDS(ON) =36mΩ@ VGS=2.5V, ID=2A
High Density Cell Design For Ultra Low On-Resistance
Subminiature surface mount package:SOT23
T*ical Application
Battery management
High speed switch
Low power DC to DC converter
友情链接: 深圳市元东发电子有限公司