AO4606
Complementary Enhancement Mode Field Effect Transistor

General Description
The AO4606 uses advanced trench
technology MOSFETs to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch,
and for a host of other applications.

Features
n-channel p-channel
VDS (V) = 30V -30V
ID = 6.9A -6A
RDS(ON) RDS(ON)
< 28mΩ (VGS=10V) < 35mΩ (VGS = 10V)
< 42mΩ (VGS=4.5V) < 58mΩ (VGS = 4.5V)

企业名：结型场效应管 深圳市众翔辉电子科技有限公司

类型：经销商

电话：

联系人：程正华

地址：广东深圳中国 广东 深圳市 深圳市福田区福建大厦B座1203室