无锡固电ISC 供应BDY56三*管

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D*CRIPTION

·Excellent Safe Operating Area

·DC Current Gain-

: h_FE=20-70@I_C= 4A

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 1.1 V(Max)@ I_C= 4A

APPLICATIONS

·Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

*SYOL**	PARAMETER	VALUE	UNIT
V_CBO	Collector-Base Voltage	150	V
V_CEO	Collector-Emitter Voltage	120	V
V_EBO	Emitter-Base Voltage	7	V
I_C	Collector Current-Continuous	15	A
I_B	Base Current	7	A
P_C	Collector Power Dissipation@T_C=25℃	117	W
T_J	Junction Temperature	200	℃
T_stg	Storage Temperature	-65~200	℃

THERMAL CHARA*ERISTICS

*SYOL**	PARAMETER	MAX	UNIT
R_{th j-c}	Thermal Resistance,Junction to Case	1.5	℃/W

ELE*RICAL CHARA*ERISTICS

T_C=25℃unless otherwise specified

*SYOL**	PARAMETER	CONDITIONS	MIN	MAX	UNIT
V_CEO(SUS)	Collector-Emitter Sustaining Voltage	I_C=200mA; I_B= 0	120		V
V_CE_(sat)_-1	Collector-Emitter Saturation Voltage	I_C= 4A; I_B= 0.4A		1.1	V
V_CE_(sat)_-2	Collector-Emitter Saturation Voltage	I_C= 10A; I_B= 3.3A		2.5	V
V_BE(_on₎	Base-Emitter On Voltage	I_C= 4A; V_CE= 4V		1.8	V
I_CEO	Collector Cutoff Current	V_CE= 60V; I_B= 0		0.5	mA
I_CEX	Collector Cutoff Current	V_CE= 150V; V_BE=-1.5V V_CE= 150V; V_BE=-1.5V, T_C=150℃		3.0 30	mA
I_EBO	Emitter Cutoff Current	V_EB= 7V; I_C= 0		3.0	mA
h_FE-1	DC Current Gain	I_C= 4A; V_CE= 4V	20	70
h_FE-2	DC Current Gain	I_C= 10A; V_CE= 4V	10
f_T	Current Gain-Bandwidth Product	I_C= 1A; V_CE= 4V; f=10MHz	10		MHz
Switching Times
t_on	Turn-On Time	I_C= 5A; I_B= 1A		0.5	μs
t_off	Turn-Off Time	I_C= 5A; I_B1= 1A; I_B2= -0.5A		2.0	μs