是
ISC
2SC3450
放大
硅(Si)
NPN型
平面型
直插型
塑料封装
企业名:无锡固电半导体股份有限公司
类型:生产企业
电话: 0510-85346980
联系人:谈增琴
邮箱:wisca@pub.jsinfo.com
地址:江苏无锡无锡新区新梅路68号
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 500V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
SY*OL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 800 | V |
VCEO | Collector-Emitter Voltage | 500 | V |
VEBO | Emitter-Base voltage | 7 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 3 | A |
PC | Collector Power Dissipation @ TC=25℃ | 90 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CBO | Collector-Base Breakdown Voltage | IC= 1mA; IE= 0 | 800 |
| V | |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 5mA; RBE=∞ | 500 |
|
| V |
V(BR)EBO | Emitter-Base Breakdown Voltage | IE= 1m A; IC= 0 | 7 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 4A; IB= 0.8A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 500V; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 10 | μA |
hFE-1 | DC Current Gain | IC= 0.8A; VCE= 5V | 15 |
| 50 |
|
hFE-2 | DC Current Gain | IC= 4A; VCE= 5V | 8 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 0.8A; VCE= 10V |
| 18 |
| MHz |
COB | Output Capacitance | IE= 0; VCB= 10V; ftest= 1.0MHz |
| 120 |
| pF |
Switching Times | ||||||
ton | Turn-on Time | IC= 5A, IB1= 1A; IB2= -2A RL= 40Ω; VCC= 200V |
|
| 0.5 | μs |
tstg | Storage Time |
|
| 3.0 | μs | |
tf | Fall Time |
|
| 0.3 | μs |
u hFE-1Cl*ifications
L | M | N |
15-30 | 20-40 | 30-50 |
"
友情链接: 深圳市元东发电子有限公司