是
isc/iscsemi
T2142
达林顿
硅(Si)
NPN型
6（A）
100（W）
平面型
TO-*N
塑料封装
企业名：无锡固电半导体股份有限公司
类型：生产企业
电话： 0510-85346980
联系人：谈增琴
QQ： 
邮箱：wisca@pub.jsinfo.com
地址：江苏无锡无锡新区新梅路68号
D*CRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min)
·High DC Current Gain
: hFE= 600(Min.)@ IB= 5mA
·Low Collector Saturation Voltage
: VCE(sat)= 1.8V(Max.)@ IC= 4A
APPLICATIONS
·Switching for dynamotor excitation
ELE*RICAL CHARA*ERISTICS
TC=25℃unless otherwise specified
SY*OL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 5mA; IB= 0 | 300 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC=1mA; IE= 0 | 400 |
|
| V |
V(BR)EBO | Emitter-BaseBreakdownVoltage | IE= 5mA; IC= 0 | 5 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= 4A; IB= 16mA |
|
| 1.8 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC=6A; IB= 24mA |
|
| 2.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC=6A; IB= 24mA |
|
| 2.5 | V |
ICBO | Collector Cutoff Current | VCB= 400V; IE= 0 |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 5.0 | mA |
hFE | DC Current Gain | IB= 5mA; VCE= 2V | 600 |
|
|
|
友情链接： 深圳市元东发电子有限公司
