FAIRCHILD/*童
FGL60N100BNTD
*缘栅(MOSFET)
N沟道
增强型
CC/恒流
SP/*外形
N-FET硅N沟道
1(V)
1(V)
1(μS)
1(pF)
企业名:深圳市港晟电子有限公司
类型:生产企业
电话: 83987713-810
联系人:王小姐
邮箱:wendywong170@126.com
地址:
∟ 整流二极管(4)
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
•High Speed Switching
•Low Saturation Voltage : VCE(sat) = 2.5 V @ IC
= 60A
•High Input Impedance
•Built-in Fast Recovery Diode
友情链接: 深圳市元东发电子有限公司