| 品牌/商标 | SI*-IC | 型号/规格 | SE2306 |
| 种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 增强型 | 用途 | S/开关 |
| 封装外形 | SP/*外形 | 材料 | N-FET硅N沟道 |
| 开启电压 | 8（V） | 夹断电压 | 20（V） |
| 跨导 | 1（μS） | *间电容 | 1（pF） |
| 低频噪声系数 | 1（dB） | *大漏*电流 | 4000（mA） |
| *大耗散功率 | 1（mW） |
SHANGHAI June 2007
MICROELE*RONICSCO., LTD.
SE2306
N-Channel Enhancement Mode Field Effect Transistor
Revision:A |
● VDS= 20V,ID= 6A
RDS(ON)< 37.5mΩ @ VGS=2.5V
RDS(ON)< 27.5mΩ @ VGS=4.5V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
Applications
●Load switch
●Power management
Construction
●Silicon epitaxial planer
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
&plu*n;10
V
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
6
A
IDM
25
A
Maximum Power Dissipation
PD
1.5
W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
℃
THERMAL CHARA*ERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83
℃/W
Electrical characteristics (Ta=25℃)
Parameter
Symbol
Conditions
Min.
T*.
Max.
Unit
OFF CHARA*ERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
0.8
μA
Gate-Body Leakage Current
IGSS
VGS=&plu*n;10V,VDS=0V
&plu*n;80
nA
ON CHARA*ERISTICS (Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.45
0.65
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=4.5A
21
27.5
mΩ
VGS=2.5V, ID=3.5A
30
37.5
mΩ
Forward Transconductance
gFS
VDS=5V,ID=4.5A
3
S
DYNAMIC CHARA*ERISTICS (Note4)
Input Capacitance
Clss
VDS=8V,VGS=0V, F=1.0MHz
600
PF
Output Capacitance
Coss
330
PF
Reverse Transfer Capacitance
Crss
140
PF
SWITCHING CHARA*ERISTICS (Note 4)
Turn-on Delay Time
td(on)
VDD=10V,ID=1A VGS=4.5V,RGEN=6Ω
10
20
nS
Turn-on Rise Time
tr
11
25
nS
Turn-Off Delay Time
td(off)
35
70
nS
Turn-Off Fall Time
tf
30
60
nS
Total Gate Charge
Qg
VDS=10V,ID=6A,
V=4.5V
10
15
nC
Gate-Source Charge
Qgs
2.3
nC
Gate-Drain Charge
Qgd
3
nC
Diode Forward Voltage (Note 3)
VSD
V=0V,I=1.7A
1.2
V
SHANGHAI June 2007 MICROELE*RONICSCO., LTD. SE2306 N-Channel Enhancement Mode Field Effect Transistor
| |||||||||||||
Features● VDS= 20V,ID= 6A RDS(ON)< 37.5mΩ @ VGS=2.5V RDS(ON)< 27.5mΩ @ VGS=4.5V ●High Power and current handing capability ●Lead free product is acquired ●Surface Mount Package |
| ||||||||||||
Applications ●Load switch ●Power management | |||||||||||||
Construction ●Silicon epitaxial planer
| |||||||||||||
Absolute maximum ratings (Ta=25℃) | |||||||||||||
Parameter | Symbol | Limits | Unit | ||||||||||
Drain-Source Voltage | VDS | 20 | V | ||||||||||
Gate-Source Voltage | VGS | &plu*n;10 | V | ||||||||||
Drain Current-Continuous@ Current-Pulsed (Note 1) | ID | 6 | A | ||||||||||
IDM | 25 | A | |||||||||||
Maximum Power Dissipation | PD | 1.5 | W | ||||||||||
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 To 150 | ℃ | ||||||||||
THERMAL CHARA*ERISTICS | |||||||||||||
Thermal Resistance,Junction-to-Ambient (Note 2) | RθJA | 83 | ℃/W | ||||||||||
Electrical characteristics (Ta=25℃) | |||||||||||||
Parameter | Symbol | Conditions | Min. | T*. | Max. | Unit | |||||||
OFF CHARA*ERISTICS |
|
|
|
|
|
| |||||||
Drain-Source Breakdown Voltage | BVDSS | VGS=0V ID=250μA | 20 |
|
| V | |||||||
Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V |
|
| 0.8 | μA | |||||||
Gate-Body Leakage Current | IGSS | VGS=&plu*n;10V,VDS=0V |
|
| &plu*n;80 | nA | |||||||
ON CHARA*ERISTICS (Note 3) |
|
|
|
|
|
| |||||||
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