| 品牌/商标 | INR美德国际整流器件 | 型号/规格 | IRF系列 |
| 种类 | *缘栅(MOSFET) | 沟道类型 | N沟道 |
| 导电方式 | 增强型 | 用途 | AM/调幅 |
| 封装外形 | CER-DIP/陶瓷直插 | 材料 | GE-N-FET锗N沟道 |
| 开启电压 | 10（V） |
IRF9540 TO-220封装 IR美国国际整流器 50/管 原装* 现货
系列IRF TO-220 TO-247 原装*现货 欢迎查询
IRF9540参数
Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
5/13/98
S
D
G
TO-220AB
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16 A
IDM Pulsed Drain Current -76
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage &plu*n; 20 V
EAS Single Pulse Avalanche Energy 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
友情链接： 深圳市元东发电子有限公司
