品牌/商标 | NXP | 型号/规格 | BT134W-600 |
封装材料 | 塑料封装 | 控制方式 | 双向 |
*数 | 三* | 额定正向平均电流 | 1(A) |
GENERAL D*CRIPTION
Gl*p*ivatedtriacsinaplastic
envelopesuitableforsurface
mounting,intendedforusein
applicationsrequiringhigh
bidirectionaltransientandblocking
voltagecapabilityandhighthermal
cyclingperformance.T*ical
applicationsincludemotorcontrol,
industrialanddomesticlighting,
heatingandstaticswitching.
LIMITING VALU*
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SY*OLPARAMETERCONDITIONSMIN.MAX.UNIT
-500-600-800
1 1
Repetitive peak off-state0V
V
DRM
voltages
I
RMS on-state currentfull sine wave; T ? 108 ?C-1A
T(RMS) sp
I Non-repetitive peakfull sine wave; T = 25 ?C prior to
TSM j
on-state currentsurge
t = 20 ms-10A
t = 16.7 ms-11A
2 2 2
I tI t for fusingt = 10 ms-0.5A s
dI
/dtRepetitive rate of rise ofI = 1.5 A; I = 0.2 A;
T TM G
/dt = 0.2 A/?s
on-state current afterdI
G
triggeringT2+ G+-50A/?s
T2+ G--50A/?s
T2- G--50A/?s
T2- G+-10A/?s
I Peak gate current-2A
GM
V Peak gate voltage-5V
GM
P Peak gate power-5W
GM
P Average gate powerover any 20 ms period-0.5W
G(*)
T Storage temperature-40150?C
stg
T Operating junction-125?C
j
temperature
友情链接: 深圳市元东发电子有限公司