| 品牌/商标 | ROHM | 型号/规格 | EMH3/EMH3T2R |
| 批号 | 08+ | 封装 | SOT563/EMT6/SC-107C |
| 营销方式 | 库存 | 产品性质 | * |
| 处理信号 | 模拟信号 | 制作工艺 | 半导体集成 |
| 导电类型 | 双*型 | 集成程度 | 小规模 |
| 规格尺寸 | 1（mm） | 工作温度 | -40~85（℃） |
| 静态功耗 | 1（mW） | 类型 | 通信IC |
General purpose (dual di*al transistors)
EMH3 / UMH3N / IMH3A
Features
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
z z z zStructure
Epitaxial planar t*e
NPN silicon transistor
The following characteristics apply to both DTr1 and DTr2.
z z z zAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Limits Unit
VCBO 50 V
VCEO 50 V
VEBO 5V
IC 100 mA
Tj 150 °C
Tstg −55~+150 °C
Pc
EMH3,UMH3N 150 (TOTAL)
mW
IMH3A 300 (TOTAL)
∗1
∗2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
友情链接： 深圳市元东发电子有限公司
