Symbol

Parameter

Limits

Unit

VDSS

Drain-source voltage

30

V

VGSS

Gate-source voltage

±20

V

ID

Drain current

Continuous

±100

mA

IDP*1

Pulsed

±400

mA

Tch

Channel temperature

150

℃

Tstg

Storage temperature

-55 to +150

℃

Symbol

Conditions

Min

Typ

Max

Unit

IGSS

VGS = ±20V, VDS = 0V

-

-

±1

uA

V(BR)DSS

ID = 10uA, VGS = 0V

30

-

-

V

IDSS

VDS = 30V, VGS = 0V

-

-

1

uA

VGS(th)

VDS = 3V, ID = 100uA

0.8

-

1.5

V

RDS(on)

ID = 10mA, VGS = 4V

-

5

8

Ω

ID = 1mA, VGS = 2.5V

-

7

13

Ω

Ciss

VDS = 5V, VGS = 0V

f = 1MHz

-

13

-

pF

Coss

-

9

-

pF

Crss

-

4

-

pF

td(on)

ID = 10mA, VDD= 5V

VGS = 5V

RL = 500Ω

RG = 10Ω

-

15

-

ns

tr

-

35

-

ns

td(off)

-

80

-

ns

tf

-

80

-

ns