英文描述：Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.

中文描述：第五代HEXFETs国际整流器 
利用*的加工技术，以实现 
*低的导通电阻每硅片面积。这 
效益，结合快速开关速度和联合 
坚固耐用的设备的设计，HEXFET功率 
MOSFET是众所周知的，提供设计师 
有一个使用**和*的设备 
在各种应用。 
采用SO - 8已被修改，通过定制 
引线框架和热特性增强 
多模能力，使其成为理想中的各种 
电源应用。有了这些改进，多 
设备可用于在应用程序与显着 
降低电路板空间。封装是专为 
汽相，*，或波峰焊技术。

公司：楚望科技（香港）有限公司

MSN:chuwang001@hotmail.com

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