| 产品类型 | 快恢复二*管 | 品牌/商标 | PHILIPS/ST/ON |
| 型号/规格 | B* SOT-23 | 结构 | 平面型 |
| 材料 | 硅(Si) | 封装形式 | 贴片型 |
| 封装材料 | 塑料封装 | 功率特性 | *率 |
| 频率特性 | 中频 | 发光颜色 | 黄绿色 |
| *高反向电压VR | 85（V） | 正向直流电流IF | 215（mA） |
*现货供应 开关二*管B*
High-speed double diode B*
FEATUR*
· Small plastic SMD package
· High switching speed: max. 4 ns
· Continuous reverse voltage:
max. 75 V
· Repetitive peak reverse voltage:
max. 85 V
· Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
· High-speed switching in thick and
thin-film circuits.
D*CRIPTION
The B* consists of two
high-speed switching diodes
connected in series, fabricated in
planar technology, and encapsulated
in the *all SOT23 plastic SMD
package.
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
PINNING
TYPE NU*ER
MARKING
CODE(1)
B* A7*
PIN D*CRIPTION
1 anode
2 cathode
3 common connection
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpa2ge 1
3 MAM232
2 1
3
LIMITING VALU*
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board.
SY*OL PARAMETER CONDITIONS MIN. MAX. UNIT
Per diode
VRRM repetitive peak reverse voltage - 85 V
VR continuous reverse voltage - 75 V
IF continuous forward current single diode loaded; see Fig.2;
note 1
- 215 mA
double diode loaded; see Fig.2;
note 1
- 125 mA
IFRM repetitive peak forward current - 450 mA
IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1 ms - 4 A
t = 1 ms - 1 A
t = 1 s - 0.5 A
Ptot total power dissipation Tamb = 25 °C; note 1 - 250 mW
Tstg storage temperature -65 +150 °C
Tj junction temperature - 150 °
友情链接： 深圳市元东发电子有限公司
