*现货供应 开关二*管1N4448W

FEATUR*
•Hermetically sealed leaded gl* SOD27 (DO-35) package
•High switching speed: max. 4 ns
•General application
•Continuous reverse voltage: max. 100 V
•Repetitive peak reverse voltage: max. 100 V
•Repetitive peak forward current: max. 450 mA.
APPLICATIONS
•High-speed switching.
D*CRIPTION
The 1N4148 and 1N4448 are high-speed switching diodes fabricated in planar technology, and encapsulated in hermetically sealed leaded gl* SOD27 (DO-35) packages.
MARKING
TYPE NU*ER
MARKING CODE
1N4148
1N4148PH or 4148PH
1N4448
1N4448
Fig.1Simplified outline (SOD27; DO-35) and symbol.The diodes are t*e branded.handbook, halfpageMAM246ka
ORDERING INFORMATION
TYPE NU*ER
PACKAGE
NAME
D*CRIPTION
VERSION
1N4148
−
hermetically sealed gl* package; axial leaded; 2 leads
SOD27
1N4448
2004 Aug 10 3
NXP Semiconductors Product data sheet
High-speed diodes 1N4148; 1N4448
LIMITING VALU*
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.Device mounted on an FR4 printed-circuit board; lead length 10 mm.
SY*OL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
100
V
VR
continuous reverse voltage
−
100
V
IF
continuous forward current
see Fig.2; note 1
−
200
mA
IFRM
repetitive peak forward current
−
450
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to surge; see Fig.4
t = 1 μs
−
4
A
t = 1 ms
−
1
A
t = 1 s
−
0.5
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
500
mW
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
−
200
°C
ELE*RICAL CHARA*ERISTICS
Tj = 25 °C unless otherwise specified.
SY*OL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
see Fig.3
1N4148
IF = 10 mA
−
1
V
1N4448
IF = 5 mA
0.62
0.72
V
IF = 100 mA
−
1
V
IR
reverse current
VR = 20 V; see Fig.5
25
nA
VR = 20 V; Tj = 150 °C; see Fig.5
−
50
μA
IR
reverse current; 1N4448
VR = 20 V; Tj = 100 °C; see Fig.5
−
3
μA
Cd
diode capacitance
f = 1 MHz; VR = 0 V; see Fig.6
−
4
pF
trr
reverse recovery time
when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7
−
4
ns
Vfr
forward recovery voltage
when switched from IF = 50 mA; tr = 20 ns; see Fig.8
−
2.5
V
THERMAL CHARA*ERISTICS
Note
1.Device mounted on a printed-circuit board without metallization pad.
SY*OL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth(j-tp)
thermal resistance from junction to tie-point
lead length 10 mm
240
K/W
Rth(j-a)
thermal resistance from junction to ambient
lead length 10 mm; note 1
350
K/W

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