1SS226
1 2007-11-01
TOSHIBA Diode Silicon Epitaxial Planar T*e
1SS226
Ultra High Speed Switching Application
z Small package : SC-59
z Low forward voltage : VF (3) = 0.9V (t*.)
z Fast reverse recovery time : trr = 1.6ns (t*.)
z Small total capacitance : * = 0.9pF (t*.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 (*) mA
Average forward current IO 100 (*) mA
Surge current (10ms) IFSM 2 (*) A
Power dissipation P 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55~125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) Unit rating. Total rating = Unit rating × 0.7.
Electrical Characteristics (Ta = 25°C)
Characteristic Symbol
Test
Circuit Test Condition Min T*. Max Unit
VF (1) ― IF = 1mA ― 0.60 ―
Forward voltage VF (2) ― IF = 10mA ― 0.72 ―
VF (3) ― IF = 100mA ― 0.90 1.20
V
IR (1) ― VR = 30V ― ― 0.1
Reverse current
IR (2) ― VR = 80V ― ― 0.5
μA
Total capacitance * ― VR = 0, f = 1MHz ― 0.9 3.0 pF
Reverse recovery time trr ― IF = 10mA (Fig.1) ― 1.6 4.0 ns

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